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| Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors DESCRIPTION With TO-220C package DARLINGTON High DC current gain Low collector saturation voltage Complement to type TIP115/116/117 APPLICATIONS For industrial use PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION TIP110/111/112 Absolute maximum ratings(Tc=25ae ) SYMBOL VCBO PARAMETER CHA IN Collector-base voltage ES NG TIP111 TIP112 TIP110 TIP111 TIP112 TIP110 Open emitter MIC E CONDITIONS OND TOR UC VALUE 60 80 100 60 UNIT V VCEO Collector-emitter voltage Open base 80 100 V VEBO IC ICM IB Emitter-base voltage Collector current-DC Collector current-Pulse Base current-DC Open collector 5 2 4 50 V A A mA TC=25ae PC Collector power dissipation Ta=25ae Tj Tstg Junction temperature Storage temperature 50 W 2 150 -65~150 ae ae Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER TIP110 VCEO(SUS) Collector-emitter sustaining voltage TIP111 TIP112 VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage TIP110 ICBO Collector cut-off current TIP111 TIP112 IC=2A ,IB=8mA IC=2A ; VCE=4V VCB=60V, IE=0 VCB=80V, IE=0 VCB=100V, IE=0 VCE=30V, IB=0 VCE=40V, IB=0 VCE=50V, IB=0 VEB=5V; IC=0 IC=30mA, IB=0 CONDITIONS TIP110/111/112 SYMBOL MIN 60 80 100 TYP. MAX UNIT V 2.5 2.8 V V 1 mA ICEO Collector cut-off current TIP110 TIP111 IEBO hFE-1 hFE-2 Cob CHA IN Emitter cut-off current DC current gain DC current gain Output capacitance E SEM NG TIP112 OND IC TOR UC 2 2 mA mA IC=1A ; VCE=4V IC=2A ; VCE=4V IE=0 ; VCB=10V,f=0.1MHz 1000 500 100 pF 2 Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors PACKAGE OUTLINE TIP110/111/112 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors TIP110/111/112 CHA IN E SEM NG OND IC TOR UC 4 |
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